The name of the concept the inventor has chosen is Super Integrated Circuit Chip Semiconductor Device (CP555 Circuit Chip), although he is open to the possibility of a name change and reserves final approval regarding the official name.   Branding is important, of course, but the concept is the official foundation for the invention and any forthcoming applications of the invention.

 The invention is for a Durable, High-Temperature Electronic Integrated Circuit Chip which will revolutionize well logging in the the downhole oil and gas industry, the automotive industry and aerospace/avionics industry by introducing a stronger high-temperature electronic circuit for MEA or more electric aircraft/automobile.  These electromechanical and mechatronic systems place the distributed controls closer to the engine and requires locating sensors, signal conditioning, and control electronics closer to heat sources.  Operation at these temperature limits will cause packaging-related failure and silicon-related failure with substrate leakage, are decreased carrier mobility, electromigration of metal interconnects, and decreased dielectric breakdown strength.

The concept Mr. Tarczynski has envisioned is an integrated circuit chip, which has a ceramic package casing made from (B4-C) Boron Carbide, a non-conducting ceramic material.  The IC is connected to connector pins by microcircuits and a custom-formulated bond wire.  Heterodiamond substrates and dielectric components allow these integrated circuits to reduce electro-migration to a minimum, to produce superior radiation hardness, heat resistance, electromagnetic shielding, and to provide resistance to damage from harsh elements and environments.  A further, more detailed explanation of the functionality of this invention will be elaborated upon in the following paragraph.

Semiconducter-1-4-645x446Mr. Tarczynski has been designing and documenting this concept for quite some time. He has several “mock-up” drawings of the product, which have provided the inventor with a sense of how the concept will appear once brought into production.  This is beneficial for making any necessary modifications and revisions for improvements; thus promoting a more satisfactory and overall accommodating product.

As currently designed in the technical drawings and 3-D models, the invention has unique features not presently available in the marketplace.  Although the system has not yet been engineered and is still in the 3-D developmental stages, an explanation of possible functionality is as follows:

 The Super Integrated Circuit Chip Semiconductor Device has a superior ceramic outer casing and houses a chip pad and multiple layers of Heterodiamond Substrates with bonding wire that contains an Au—Cu—Ag alloy, including 5-40% Ag by weight in Cu having a purity of 99.999% or greater; at least one element of a first group consisting of Pd, Rh, Pt, and Ir in an amount of about 50-10,000 ppm by weight; at least one element of a second group consisting of B, Be, and Ca in an amount of about 1-50 ppm by weight; at least one element of a third group consisting of P, Sb, and Bi in an amount of 1-50 ppm by weight; and at least one element of a fourth group consisting of Mg, Ti, Zn and Sn in an amount of about 5-50 ppm by weight.   Boron Carbide, used for the outer casing, is one of the lightest, hardest, chemically inert man-made materials available in commercial quantities that has a finite melting point low enough to permit its relatively easy fabrication into shapes. The unique properties of Boron Carbide include high hardness, chemical inertness and a high neutron absorbing cross section.  Heterodiamond is confirmed to have both the highest hardness of diamonds and the excellent heat resistance of cubic BN.  Additionally, it shows promise as a low dielectric constant material with good mechanical strength, suitable to be used in new CMOS technologies.  For optical applications, the deposition of BCN coatings on polymers is a promising method for protecting the polymer surface against wear and scratching.  BCN films have high optical transparency and can be used as mask substrates for X-ray lithography.   Combinations of these two materials are already being used successfully in the aerospace and nuclear industries, providing lower pollution and improved fuel economy for oil and gas combustion applications, and providing the ability to drill deeper wells faster for enhanced oil production.  Transportation fields, including personal, commercial and military, and computers also rely on the combination of these materials.  The bonding wire is highly reliable with a strong tensile strength at room temperature and high temperatures, and a favorable bonding ability.  When the bonding wire is looped, no rupture occurs in the ball neck region.  Also, no chip cracking occurs since the ball is soft.  This product will be available in different models and sizes, including CMOS, PIC and DIE microcontrollers’ circuit or computer processors.


The unique features of this invention will provide the following benefits for consumers everywhere:

  • New durable integrated circuit chips that provides reliability in extremely high temperatures

  • Provides the ability for a more stable and prolonged operation of electronic devices and circuits, which can exceed 10,000 hours of continuous operation at or above 700 degrees C due to the high-temperature stability of Boron Carbide and Heterodiamond

  • Provides an inherent radiation hardened solution due to Boron Carbide’s thermal neutron capture cross section of 600 (barn)

  • Provides for better CMOS technology due to Heterodiamond’s low dielectric constant which minimizes cross-talk and electromigration

  • Boron Carbide provides inherent EMF/EMI shielding due to an electromagnetic interference shielding effectiveness with the 1- to 4-GHz frequency range

  • Reliability is enhanced as it stays within operation parameters for a longer duration, yielding greater opportunities to use and to control logic-based systems in harsh conditions

  • The bonding wire has a great deal of synergy between its elements and will help to resolve the current dilemma that occurs with CMOS Scaling and electromigration beyond 8 nm

  • It has a free air ball that is softer than conventional ones, so chip cracking will not occur during wire bonding processes, even when an ultra-low loop is formed with the bonding wire

  • The ball grain refinements are suppressed to reduce the grain area; thereby reducing an atomic diffusion path between Au and Ag

  • The intermetallic compound and Kirkendall void formation is suppressed; thereby improving thermal stability

  • This way of forming electrical interconnections in semiconductor packages will have many new industrial applications and numerous applications in other fields