January 24, 2022

CHICAGO PIXELS

SEMICONDUCTOR RESEARCH CENTER

Transphorm’s SuperGaN Gen IV multi-kW-class power FET gains AEC-Q101 qualification

Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion applications — says that its flagship SuperGaN Gen IV 35mΩ device has completed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors, representing the firm’s third automotive-qualified product line…