December 8, 2021

CHICAGO PIXELS

SEMICONDUCTOR RESEARCH CENTER

EPC’s eGaN FETs used by innosonix in high-end audio amplifier

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA says that, by changing from traditional silicon FETs to its EPC2059 enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistor (FET), Germany-based innosonix GmbH has reduced power-consuming idle loss by 35% and lowered the on-resistance to increase the total power efficiency by 5% in its latest high-end Maxx Series multi-channel power amplifier…