October 22, 2021

CHICAGO PIXELS

SEMICONDUCTOR RESEARCH CENTER

Enkris’ demonstrates CMOS-compatible high-voltage GaN-on-Si HEMT epi reaches 300mm

Enkris Semiconductor of Suzhou Industrial Park, China – which was founded in 2012 as a pure-play foundry for gallium nitride (GaN) epitaxial wafers for power electronics, RF, micro-LED and UVC applications – says that it has demonstrated a series of high-quality 300mm GaN-on-silicon high-electron-mobility transistor (HEMT) epiwafers of what it claims are excellent thickness uniformity and low wafer bow for 200V, 650V and 1200V power applications, paving the way for device processing using more sophisticated 300mm CMOS-compatible lines…