September 17, 2021

CHICAGO PIXELS

SEMICONDUCTOR RESEARCH CENTER

ROHM launches hybrid IGBTs with built-in 650V SiC diode

Power semiconductor maker ROHM has developed the RGWxx65C series of hybrid insulated-gate bipolar transistors (IGBTs) with an integrated 650V silicon carbide (SiC) Schottky barrier diode (SBD). After making samples available in March, mass production is scheduled for December…