January 27, 2022

CHICAGO PIXELS

SEMICONDUCTOR RESEARCH CENTER

ROHM’s develops 150V GaN HEMT with 8V gate breakdown voltage

Power semiconductor maker ROHM says that it has developed the industry’s highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices – optimized for power supply circuits in industrial and communication equipment…