June 15, 2021

CHICAGO PIXELS

SEMICONDUCTOR RESEARCH CENTER

Imec and Aixtron demo 200mm GaN epi on AIX G5+ C for 1200V applications with breakdown over 1800V

Nanoelectronics research centre imec of Leuven, Belgium and deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany have demonstrated epitaxial growth of gallium nitride (GaN) buffer layers qualified for 1200V applications on 200mm QST substrates, with a hard breakdown exceeding 1800V…