October 22, 2021

CHICAGO PIXELS

SEMICONDUCTOR RESEARCH CENTER

Mitsubishi Electric adds Ku-band GaN HEMTs to product range

Tokyo-based Mitsubishi Electric Corp is adding two new 13.75–14.5GHz (Ku-band) 30W (45.3dBm) output, 9dB-linear-gain gallium nitride high-electron-mobility transistors to its lineup of GaN HEMTs for satellite communication (SATCOM) earth stations. On sales from 15 March, the two products, one for multi-carrier communication and the other for single-carrier communication, will support increased data-transmission capacity and smaller earth stations…