December 3, 2021

CHICAGO PIXELS

SEMICONDUCTOR RESEARCH CENTER

JEDEC publishes document for bias temperature instability of SiC MOS devices

The JEDEC Solid State Technology Association (which develops standards for the microelectronics industry) has published ‘JEP184: Guideline for Evaluating Bias Temperature Instability of Silicon Carbide Metal-Oxide-Semiconductor (MOS) Devices for Power Electronic Conversion’. Developed by JEDEC’s JC-70.2 Silicon Carbide Subcommittee, JEP184 is available for free download from the JEDEC website…