October 21, 2021

CHICAGO PIXELS

SEMICONDUCTOR RESEARCH CENTER

New method observes compositional fluctuations in high-indium-content InGaN LEDs

The Low Energy Electronic Systems (LEES) Interdisciplinary Research Group (IRG) at Singapore-MIT Alliance for Research and Technology (SMART), together with Massachusetts Institute of Technology (MIT) and the National University of Singapore (NUS), have found a method to quantify the distribution of compositional fluctuations in indium gallium nitride (InGaN) quantum wells (QWs) at different indium concentrations…